Ideal Vacuum Circular Magnetron Sputtering Targets, MAGNESIUM FLUORIDE - MgF2 Sputtering Target, 3'' Diameter x 0.125" Thick, 99.995 Percent Purity, Metallic Bonded to a OFHC Copper Backing Plate
Ideal Vacuum Products, LLC.
This product is a circular magnetron MAGNESIUM FLUORIDE - MgF2 sputtering target, with a 3'' diameter x 0.125" thickness. It is 99.995% pure, and is metallically bonded to a OFHC (Oxygen-Free High Conductivity) copper backing plate.
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MAGNESIUM FLUORIDE - MgF2
MAGNESIUM FLUORIDE - MgF2 , is a widely used material in optical applications due to its excellent transmission properties and durability. Here's a summary of its key characteristics:
Refractive Index: ~1.38 (at 550 nm), making it a low-index material.
Transparency Range: MgF2 has a broad transmission window, transmitting from the deep UV (~120 nm) to the mid-IR (~7 µm), making it suitable for UV, visible, and IR applications.
Optical Coatings: Often used in anti-reflective coatings and multilayer optical coatings for lenses, filters, and other optical components.
Durability: MgF2 is hard and chemically stable, resistant to environmental degradation, and suitable for use in harsh conditions.
Deposition Method: Typically deposited by RF sputtering due to its insulating nature.
MgF2 is commonly chosen for its wide optical transparency and low refractive index, making it ideal for reducing reflectance in various optical systems.
RF vs DC Sputtering:
RF sputtering is often the preferred method for sputtering pure metallic oxides because they are insulators and RF has an alternating electric field that prevents charge buildup on the target surface. This alternating field reduces the charge accumulation that would otherwise cause arcing in DC sputtering.
Deposition rate:
Lower deposition rate: In RF sputtering, the power transfer to the plasma is less efficient compared to DC, primarily due to the alternating nature of the electric field. This results in a lower deposition rate compared to DC sputtering under equivalent power conditions.
Target Material:
For conductive targets (like titanium in reactive sputtering), DC sputtering has a higher deposition rate. For insulating targets like pure metal oxides, RF sputtering must be used, and deposition rates are typically lower.
Power Levels:
Increasing the power can increase deposition rates in both RF and DC sputtering, but deposition rates still tend to be higher in DC for conductive materials.
Pressure and Gas Flow:
Higher deposition rates can be achieved by optimizing the gas pressure and flow, with different optimal conditions for RF vs. DC.
Notes:
Metallic or elastomer backing plate bonding is recommended for all dielectric target materials because these materials have characteristics which are not amenable to sputtering, such as, brittleness and low thermal conductivity. These targets are most susceptible to thermal shock due to their low thermal conductivity and hence, may require specific power ramp up and ramp down procedures during start up and shut down steps.
